24September2017

Materials and Electronics Engineering

The relationship between hardness and grain-size in electron-beam evaporated Pb1-xGexTe thin films

Ping Xie, Bin Li1, Suying Zhang, Dingquan Liu

Abstract
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Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R.China

Materials and Electronics Engineering 2014,1:5

Publication Date (Web): December 16, 2014 (Article)

DOI:10.11605/mee-1-5

*Corresponding author. E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Abstract

 


Figure 4 A comparison of the hardness of thin films evaporated from ingots with three Ge concentrations x, 0.10, 0.17, and 0.22, to those of PbTe.

      Pb1-xGe­xTe thin films were evaporated on silicon substrates from the ingots of single crystals using electron beam heating. The hardness of thin films was identified by means of nanoindentation measurements. Moreover, the surface topographies and compositions of thin-films were characterized by using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX), respectively. It can be found that Hall–Petch equation can be established to describe the relationship between the hardness and the grain size in Pb1-xGe­xTe thin films. It can be found that Hall–Petch equation can be established to describe the relationship between the hardness and the grain-size in Pb1-xGexTe thin films. Therefore, it can be explained for the relationship between stoichiometry and mechanical properties in thin films, that stoichiometry determines the grain-size and grain-size determines the hardness in thin films according to the Hall–Petch equation.


 

Keywords

Hall-petch equation, Pb1-xGexTe, electron-beam evaporation