24November2017

Materials and Electronics Engineering

Studying the chemical composition and structure of hafnium, aluminium and lanthanum oxide films by X-ray photoelectron spectroscop

Zhongli Li1, Yijian Liu1, Huijuan Geng1, AyraJagadhamma Letha2, Limin Sun3, Ying Wang1*, Huey-Liang Hwang1, 2*, Fedor A. Kyznetsov4, Tamara P. Smirnova4, Andrey A. Saraev5, Vasily V. Kaichev5, 6

Abstract
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1Key Laboratory for Thin Film and Micro fabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, P R China
2Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
3Shanghai Jiao Tong University, Shanghai 200240, P R China
4Nikolaev Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia
5Boreskov Institute of Catalysis, 630090 Novosibirsk, Russia
6Novosibirsk State University, 630090 Novosibirsk, Russia

Materials and Electronics Engineering 2015, 2:2

Publication Date (Web): October 2, 2015 (Article)

DOI:10.11605/mee-2-2

*Corresponding author. E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it. ; This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Abstract

 


 Figure 1 The percentage of elements within the analysis area depending on ion sputtering time for films N1-N4.

In this paper, high-κ oxides films, Al2O3, HfO2, Al2O3/HfO2, Al2O3/La2O3 and HfO2/La2O3 stacked structures, were deposited on p-type Si wafers using plasma-enhanced atomic layer deposition (PEALD). The chemical composition and structure of the deposited high-κ films were investigated in detailed research by X-ray photoelectron spectroscopy. The layer by layer depth profiling and XPS analysis indicated that the synthesized stacked structures films are alloys, consist of Hf–Al–O, La–Al–O and Hf–La–O. And the analysis results suggested that the interfacial layer were most likely composed of Hf–Si–O for Al2O3/HfO2, La–Si–O for Al2O3/La2O3, Hf–Si–O and La–Si–O for HfO2/La2O3 rather than pure silicon oxide. It is also found that Hf and La was easier to react with Si to form silicate at the interface near Si. And the top surface is easy to absorb CO2 on the surface as a result of contact with air at normal conditions when La existed.


 

Keywords

Chemical composition, Lanthanum oxide film, X-ray photoelectron spectroscopy